Laboratory of analytical methods (contact person: Ing. Jozef Dobrovodský, CSc., email: jozef.dobrovodsky@stuba.sk)
Laboratory of analytical methods provides an analysis of materials via ion beam application (IBA): RBS, PIXE, ERDA, and NRA methods – Rutherford Backscattering Spectrometry (RBS), Particle Induced X-ray Emission (PIXE), Elastic Recoil Detection Analysis (ERDA), and Nuclear reaction analysis (NRA).
Laboratory of plasma modification and deposition (contact person: Mgr. Juraj Halanda, email: juraj.halanda@stuba.sk)
The laboratory provides the devices for process application of magnetron sputtering, either reactive dual or radiofrequency magnetron sputtering with the possibility of diagnostics of plasma and thin layers thickness.
The devices allow the combination of ion implantation processes via immersing into plasma and deposition processes with ion up to 40 kV.
Devices of the Advanced Progressive Technologies Institute
The scientific centre of materials research (SlovakIon) with laboratories has at its disposal the devices in the field of ion beam, plasma modification and deposition, analytical methods, and computer modelling. The basic equipment for deposition processes by means of a ion beam and plasma in the Centre of materials research (SlovakIon) consists of the following devices for:
- reactive and non-reactive ion beam assisted deposition (IBAD) with various low energy ion sources,
- universal system devices for applying the processes of dual magnetron reactive sputtering either or radio frequency magnetron sputtering with the possibility of diagnostics of plasma and thin layers thickness,
- devices allowing the combination of ion implantation processes via immersing into plasma and deposition processes with ion up to 40 kV.
An inductive bound radio frequency discharge creates prevailingly plasma made of gases ions. The use of rare gases allows the implementation of metal ions and /or subsequent deposition of metal layers via rare gases´ ions assistance. The use of oxygen and nitrogen ions allows the formation of oxidic and nitridic films. By PBII technology, the magnetrons located above the sample holder provide high deposition speeds of metal, oxidic, or nitridic layers. In the beginning of deposition, the magnetrons should operate in HPIMS regime, when a thick plasma essential for the formation of the layer with mixed interface to achieve a good PBII assisted adherence is formed. Subsequently, they should enter the common mode with high speed of sputtering.
The devices obtained in Stage 1:
- 6 MV acceleration system with high stream of beams for ion beam assisted (IBA) analysis and ion implantation – determined particularly for the research in the following fields: physics of solids, ion beam modification of materials, atomic physics, a ion beam assisted (IBA) analysis of materials, astrophysics, and ecology. It combines the functions not commonly available with such a device, e. g. complete range of weights of elements, wide scope of accessible energies, very high weight distinction, capability of using multi charged ions, ultra high vacuum, possibility of using the field with low energy ions, and a full range of ion sources.
- Multi-purpose 500 kV air isolated acceleration system for ion implementation. The device for ion implementation technology is applicable for doping materials, material wear protection, hardness increase, anti-corrosion protection, nano-structuring, nano-layers, nano-porosity, and modification of electric, magnetic, physical or chemical surface properties.
- PIII for 3D substrates. Device for ion implantation via immersing into plasma for 3D substrates with dimensions max. 200 mm x 200 mm x 200 mm is equipped by the process module (anticorrosion steel chamber), load lock module with accessories, system of gas economy, and control system. The gas plasma is excited from ICP (inductively coupled plasma) source (frequency area: 13.56 MHz, power: 1 kW), maximum output voltage is 40 kV.
- PIII for planar substrates. The device PIII – Plasma Immersion Ion Implantation for planar substrates with a diameter max200 mm is equipped by a process module (aluminium chamber), load lock module with accessories, system of gas economy, and control system. The gas plasma is excited from ICP (inductively coupled plasma) source with two aerials (frequency area: 13.56 MHz, power: 1 kW), maximum output voltage is 20 kV.
- Magnetron system with pulse dual MS separation with power/výkon 2.5 kW. It is a reactive one direction impulse magnetron sputtering system.
- Device for coating of metal targets either by reactive or non-reactive way, especially the oxide and nitrides for optics, electronics (GaN, InN), photovoltaic (ITO, AZO, and TiO2), and for the display technology (ITO, AZO) as well as for all suitable materials for reactive one direction impulse magnetron sputtering (e.g. Si wafer, glass, metals, plastics, etc.).
- Magnetron system with pulse dual MS separation with power of 5 kW. It is a radio frequency sputtering system with bias voltage. Reactive one direction impulse sputtering system of various target such as reactive metal oxides and metals is determined for coating the targets by a reactive way. It is suitable for simultaneous sputtering of metals oxides and insulation materials via radio frequency sputtering, or metals via one direction sputtering for materials with high refractive index and for composites.
- Langmuir probe – a probe based on an electrostatic principle providing plasma diagnostics. It is equipped with appropriate software.
- Ellipsometer – a device for measuring the thickness of thin layers from the changing stage of light polarisation after reflection from the measured sample.