SiC is a promising material for a wide range of applications from semiconductor industry to e.g. in fuel elements of next generation nuclear power plants' reactors. The most recent method for SiC synthesis is based on carbon implantation into silicon substrate followed by High Energy Heavy-Ion-Beam Annealing (HE HIBA) is currently under development. Advantages of HE HIBA annealing are significantly lower temperature requirements, possibility of localized synthesis and short time of treatment, among other things. Synthesized silicon carbide will be analyzed and characterized by Rutherford backscattering spectrometry (RBS), Resonant Nuclear Reaction Analysis (R-NRA), X-ray diffraction (XRD) and transmission electron microscopy (TEM). Particularly the new experimental facility at MTF STU Trnava equipped with a 500 kV ion implanter and 6 MV tandem accelerator will be utilized. Relation between the main parameters of synthesis processes and of the resulting SiC layers will be studied.
